Publication:

110 GHz GeSi Electroabsorption Modulator on a 300mm SiPh Platform Enabling High-Density 400G/lane IM/DD Links

Date

2025
Proceedings Paper
https://doi.org/10.1109/ecoc66593.2025.11262984
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Author(s)

Bruynsteen, Cedric  
;
Ahmad, Zohauddin  
;
da Silva, Leandro  
;
Kim, Minkyu  
;
Coughlan, Conor  
;
Malik, Dharmander  
;
Berciano, Mathias  
;
Lepage, Guy  
;
Loo, Roger  
;
Kobbi, Hakim  
;
Sar, Huseyin  
;
Bipul, Swetanshu  
;
Marchese, Chiara  
;
Verheyen, Peter  
;
De Heyn, Peter  
;
Velenis, Dimitrios  
;
Chakrabarti, Maumita  
;
Ferraro, Filippo  
;
Ban, Yoojin  
;
Singh, Nishant  
;
Ossieur, Peter  
;
Van Campenhout, Joris  

Journal

2025 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS, ECOC

Abstract

We present a C-band GeSi EAM fabricated on a 300mm silicon photonics platform, exhibiting a bandwidth beyond 110 GHz. Transmission of 200, 212.5 and 224 GBaud PAM-4 is demonstrated, meeting the 25% OH SD-FEC threshold, highlighting the device's potential for next-generation optical scale-up fabrics.

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4 since deposited on 2026-05-28
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Acq. date: 2026-07-14

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