110 GHz GeSi Electroabsorption Modulator on a 300mm SiPh Platform Enabling High-Density 400G/lane IM/DD Links

Bruynsteen, Cedric; Ahmad, Zohauddin; da Silva, Leandro; Kim, Minkyu; Coughlan, Conor; Malik, Dharmander; Berciano, Mathias; Lepage, Guy; Loo, Roger; Kobbi, Hakim; Sar, Huseyin; Bipul, Swetanshu; Marchese, Chiara; Verheyen, Peter; De Heyn, Peter; Velenis, Dimitrios; Chakrabarti, Maumita; Ferraro, Filippo; Ban, Yoojin; Singh, Nishant

doi:10.1109/ecoc66593.2025.11262984

Publication:

110 GHz GeSi Electroabsorption Modulator on a 300mm SiPh Platform Enabling High-Density 400G/lane IM/DD Links

Date

2025

Proceedings Paper

https://doi.org/10.1109/ecoc66593.2025.11262984

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Journal

2025 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS, ECOC

Abstract

We present a C-band GeSi EAM fabricated on a 300mm silicon photonics platform, exhibiting a bandwidth beyond 110 GHz. Transmission of 200, 212.5 and 224 GBaud PAM-4 is demonstrated, meeting the 25% OH SD-FEC threshold, highlighting the device's potential for next-generation optical scale-up fabrics.