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Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer
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Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Houssiau, L.
;
Vitchev, R.G.
;
Pireaux, J.-J.
;
Conard, Thierry
;
Bender, Hugo
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Views
1925
since deposited on 2021-10-15
1
last month
1
last week
Acq. date: 2025-12-11
Citations