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TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Date

2011
Journal article
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dc.contributor.authorXie, Qi
dc.contributor.authorMusschoot, Jan
dc.contributor.authorSchaekers, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelabie, Annelies
dc.contributor.authorLin, Dennis
dc.contributor.authorQu, Xin-Ping
dc.contributor.authorJiang, Yu-Long
dc.contributor.authorVan den Berghe, Sven
dc.contributor.authorDetavernier, Christophe
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorLin, Dennis
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-19T21:56:32Z
dc.date.available2021-10-19T21:56:32Z
dc.date.issued2011
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20163
dc.source.beginpageG27
dc.source.endpageG30
dc.source.issue5
dc.source.journalElectrochemical and Solid-State Letters
dc.source.volume14
dc.title

TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

dc.typeJournal article
dspace.entity.typePublication
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