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Challenges for smoothing EUV photoresist line-width-roughness: plasma treatment from 40 to 22 nm half pitches
Publication:
Challenges for smoothing EUV photoresist line-width-roughness: plasma treatment from 40 to 22 nm half pitches
Date
2013
Presentation
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Altamirano Sanchez, Efrain
;
De Schepper, Peter
;
Hansen, Terje
;
Boullart, Werner
Journal
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1949
since deposited on 2021-10-21
Acq. date: 2025-10-29
Citations
Metrics
Views
1949
since deposited on 2021-10-21
Acq. date: 2025-10-29
Citations