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Simulation of the phosphorus profiles in a c-Si solar cell fabricated using POCl3 diffusion or ion implantation and annealing

Date

2013
Proceedings Paper
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dc.contributor.authorFlorakis, Antonios
dc.contributor.authorJanssens, Tom
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDelmotte, Joris
dc.contributor.authorDouhard, Bastien
dc.contributor.authorPoortmans, Jef
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-21T07:39:39Z
dc.date.available2021-10-21T07:39:39Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22354
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S1876610213013623
dc.source.beginpage263
dc.source.conferenceProceedings of the 3rd International Conference on Silicon Photovoltaics - SiliconPV
dc.source.conferencedate25/03/2013
dc.source.conferencelocationHamelin Germany
dc.source.endpage269
dc.title

Simulation of the phosphorus profiles in a c-Si solar cell fabricated using POCl3 diffusion or ion implantation and annealing

dc.typeProceedings paper
dspace.entity.typePublication
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