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MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
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1925 since deposited on 2021-10-23
Acq. date: 2025-12-09
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Views
1925 since deposited on 2021-10-23
Acq. date: 2025-12-09
Citations