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AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
Publication:
AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
Date
2015
Proceedings Paper
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31448.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ma, J.
;
Zhang, W.
;
Zhang, J.F.
;
Ji, Z.
;
Benbakhti, B.
;
Franco, Jacopo
;
Mitard, Jerome
;
Witters, Liesbeth
;
Collaert, Nadine
;
Groeseneken, Guido
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1909
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
Metrics
Views
1909
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations