Publication:

Demonstration of a High-Efficiency Short-Cavity III-V-on-Si C-Band DFB Laser Diode

Date

2022
Journal article
https://doi.org/10.1109/JSTQE.2021.3122552
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dc.contributor.authorRahimi Vaskasi, Javad
dc.contributor.authorVan Kerrebrouck, Joris
dc.contributor.authorHaq, Bahawal
dc.contributor.authorBauwelinck, Johan
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorMorthier, Geert
dc.contributor.imecauthorRahimi Vaskasi, Javad
dc.contributor.imecauthorVan Kerrebrouck, Joris
dc.contributor.imecauthorBauwelinck, Johan
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.imecauthorMorthier, Geert
dc.contributor.orcidimecVan Kerrebrouck, Joris::0000-0002-6611-7979
dc.contributor.orcidimecBauwelinck, Johan::0000-0001-5254-2408
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.contributor.orcidimecMorthier, Geert::0000-0003-1819-6489
dc.contributor.orcidimecRahimi Vaskasi, Javad::0000-0001-8983-8392
dc.date.accessioned2023-03-30T10:23:20Z
dc.date.available2021-11-24T05:03:11Z
dc.date.available2023-03-30T10:23:20Z
dc.date.issued2022
dc.identifier.doi10.1109/JSTQE.2021.3122552
dc.identifier.issn1077-260X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38462
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage8200406
dc.source.endpagena
dc.source.issue3
dc.source.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
dc.source.numberofpages6
dc.source.volume28
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsTHRESHOLD
dc.title

Demonstration of a High-Efficiency Short-Cavity III-V-on-Si C-Band DFB Laser Diode

dc.typeJournal article
dspace.entity.typePublication
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