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Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFETs
Publication:
Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFETs
Date
1999
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Henson, W. K.
;
Yang, N.
;
Wortman, J. J.
Journal
IEEE Electron Device Letters
Abstract
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1987
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations
Metrics
Views
1987
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations