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Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET's

Date

1997
Journal article
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dc.contributor.authorVan Den Bosch, Sven
dc.contributor.authorMartens, Luc
dc.contributor.imecauthorMartens, Luc
dc.date.accessioned2021-09-30T09:45:49Z
dc.date.available2021-09-30T09:45:49Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2212
dc.source.beginpage2311
dc.source.endpage2313
dc.source.issue12
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume44
dc.title

Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET's

dc.typeJournal article
dspace.entity.typePublication
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