Publication:

Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications

Date

2007
Proceedings Paper
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dc.contributor.authorDelabie, Annelies
dc.contributor.authorNyns, Laura
dc.contributor.authorBellenger, Florence
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorHoussa, Michel
dc.contributor.authorLin, Dennis
dc.contributor.authorMeuris, Marc
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSioncke, Sonja
dc.contributor.authorSwerts, Johan
dc.contributor.authorFedorenko, Yanina
dc.contributor.authorMaes, Jan
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T15:44:37Z
dc.date.available2021-10-16T15:44:37Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12037
dc.source.beginpage227
dc.source.conferenceAtomic Layer Deposition Applications 3
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
dc.source.endpage241
dc.title

Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications

dc.typeProceedings paper
dspace.entity.typePublication
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