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Comparative study on the performance of InAs/Al0.2Ga0.8Sb quantum well Hall sensors on germanium and GaAs substrates

Date

2000
Journal article
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dc.contributor.authorBehet, Markus
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorMijlemans, P.
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-14T12:40:37Z
dc.date.available2021-10-14T12:40:37Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4108
dc.source.beginpage175
dc.source.endpage175
dc.source.issue3
dc.source.journalSensors and Actuators A
dc.source.volume79
dc.title

Comparative study on the performance of InAs/Al0.2Ga0.8Sb quantum well Hall sensors on germanium and GaAs substrates

dc.typeJournal article
dspace.entity.typePublication
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