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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Date

2017
Journal article
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dc.contributor.authorWu, Tian-Li
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorLiang, Hu
dc.contributor.authorPosthuma, Niels
dc.contributor.authorYou, Shuzhen
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorStoffels, Steve
dc.contributor.authorMarcon, Denis
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-24T19:11:05Z
dc.date.available2021-10-24T19:11:05Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29953
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8089745/
dc.source.beginpage1696
dc.source.endpage1699
dc.source.issue12
dc.source.journalIEEE Electron Device Letters
dc.source.volume38
dc.title

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

dc.typeJournal article
dspace.entity.typePublication
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