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The 'C' shape behavior of the floating body effect in fucntion of temperature in PD SOI n-MOSFETs

Date

2007
Proceedings Paper
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dc.contributor.authorAgopian, P.G.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T15:00:14Z
dc.date.available2021-10-16T15:00:14Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11630
dc.source.beginpage107
dc.source.conferenceSilicon-on-Insulator Technology and Devices 13
dc.source.conferencedate6/05/2007
dc.source.conferencelocationChicago, IL USA
dc.source.endpage111
dc.title

The 'C' shape behavior of the floating body effect in fucntion of temperature in PD SOI n-MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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