Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

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Author(s)

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Decoutere, Stefaan

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Lauwaert, Johan

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Bakeroot, Benoit

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

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233 since deposited on 2024-09-09

2last month

Acq. date: 2025-12-08