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Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping
Publication:
Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping
Date
2024
Journal article
https://doi.org/10.1109/TED.2024.3446488
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Alaei, Mojtaba
;
Borga, Matteo
;
Fabris, Elena
;
Decoutere, Stefaan
;
Lauwaert, Johan
;
Bakeroot, Benoit
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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226
since deposited on 2024-09-09
Acq. date: 2025-10-24
Citations
Metrics
Views
226
since deposited on 2024-09-09
Acq. date: 2025-10-24
Citations