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Simulation of boron diffusion in strained Si1-xGex epitaxial layers

Date

2000
Proceedings Paper
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dc.contributor.authorKrishnasamy, Rajendran
dc.contributor.authorSchoenmaker, Wim
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-14T13:37:55Z
dc.date.available2021-10-14T13:37:55Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4686
dc.source.beginpage206
dc.source.conferenceProceedings of the International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate6/09/2000
dc.source.conferencelocationSeattle, WA USA
dc.source.endpage209
dc.title

Simulation of boron diffusion in strained Si1-xGex epitaxial layers

dc.typeProceedings paper
dspace.entity.typePublication
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