Publication:

EUV modeling accruracy and integration requirements for the 16nm node

Date

2010
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorZavyalova, Lena
dc.contributor.authorSu, Irene
dc.contributor.authorJang, Stephen
dc.contributor.authorCobb, Jonathan
dc.contributor.authorWard, Brian
dc.contributor.authorSorensen, Jacob
dc.contributor.authorSong, Hua
dc.contributor.authorGao, Weimin
dc.contributor.authorLucas, Kevin
dc.contributor.authorLorusso, Gian
dc.contributor.authorHendrickx, Eric
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorHendrickx, Eric
dc.date.accessioned2021-10-19T00:53:39Z
dc.date.available2021-10-19T00:53:39Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18405
dc.source.beginpage763627
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography
dc.source.conferencedate21/02/2010
dc.source.conferencelocationSan Jose, CA USA
dc.title

EUV modeling accruracy and integration requirements for the 16nm node

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
20420.pdf
Size:
1.91 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions