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On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack

Date

2008
Journal article
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dc.contributor.authorMaji, D.
dc.contributor.authorCrupi, F.
dc.contributor.authorGiusi, G.
dc.contributor.authorPace, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRao, V.R.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T08:43:03Z
dc.date.available2021-10-17T08:43:03Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14103
dc.source.beginpage163508
dc.source.issue16
dc.source.journalApplied Physics Letters
dc.source.volume92
dc.title

On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack

dc.typeJournal article
dspace.entity.typePublication
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