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High resolution 2D scanning spreading resistance microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length

Date

2003
Proceedings Paper
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dc.contributor.authorHartwich, J.
dc.contributor.authorAlvarez, David
dc.contributor.authorDreeskornfeld, L.
dc.contributor.authorHoffman, F.
dc.contributor.authorKretz, J.
dc.contributor.authorLandgraf, E.
dc.contributor.authorLuyken, R.J.
dc.contributor.authorRösner, W.
dc.contributor.authorSchulz, T.
dc.contributor.authorSpecht, M.
dc.contributor.authorStädele, M.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorRisch, Lothar
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-15T04:52:51Z
dc.date.available2021-10-15T04:52:51Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7642
dc.source.beginpage35
dc.source.conferenceIEEE International SOI Conference
dc.source.conferencedate29/09/2003
dc.source.conferencelocationNewport Beach, CA USA
dc.source.endpage36
dc.title

High resolution 2D scanning spreading resistance microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length

dc.typeProceedings paper
dspace.entity.typePublication
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