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The RF potential of high-performance 100nm CMOS technology

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dc.contributor.authorVenezia, Vincent
dc.contributor.authorScholten, A.J.
dc.contributor.authorDetcheverry, Celine
dc.contributor.authorBoots, Henk
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorGrau, Lluis
dc.contributor.authorKlaassen, D.B.M.
dc.contributor.authorVelghe, Rudolf
dc.contributor.authorHavens, R.J.
dc.contributor.authorTiemeijer, Luuk
dc.date.accessioned2021-10-14T23:51:15Z
dc.date.available2021-10-14T23:51:15Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7010
dc.source.beginpage491
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
dc.source.endpage494
dc.title

The RF potential of high-performance 100nm CMOS technology

dc.typeProceedings paper
dspace.entity.typePublication
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