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ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques
Publication:
ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques
Date
2008
Presentation
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17762.pdf
315.52 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Griffoni, A.
;
Tazzoli, A.
;
Gerardin, S.
;
Simoen, Eddy
;
Claeys, Cor
;
Meneghesso, G.
Journal
Abstract
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1937
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations
Metrics
Views
1937
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations