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Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation

Date

2020
Journal article
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dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAlian, AliReza
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorWaldron, Niamh
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-29T05:07:36Z
dc.date.available2021-10-29T05:07:36Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36045
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9127093
dc.source.beginpage3062
dc.source.endpage3068
dc.source.issue8
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume67
dc.title

Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation

dc.typeJournal article
dspace.entity.typePublication
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