Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN Gate

dc.contributor.author	Wang, Danghui
dc.contributor.author	Zheng, Junna
dc.contributor.author	Zhang, Yang
dc.contributor.author	Xu, Tianhan
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Govoreanu, Bogdan
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Govoreanu, Bogdan
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2022-07-07T15:52:58Z
dc.date.available	2021-12-16T02:05:47Z
dc.date.available	2022-07-07T15:52:58Z
dc.date.issued	2021
dc.identifier.doi	10.1109/TED.2021.3118660
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/38617
dc.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage	6020
dc.source.endpage	6025
dc.source.issue	12
dc.source.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages	6
dc.source.volume	68
dc.subject.keywords	MOSFET PARAMETER EXTRACTION
dc.subject.keywords	THRESHOLD VOLTAGE
dc.subject.keywords	CMOS TECHNOLOGY
dc.subject.keywords	DEGRADATION
dc.subject.keywords	DC
dc.title	Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN Gate
dc.type	Journal article
dspace.entity.type	Publication
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