Publication:

Boosting the on-current of Si-based tunnel field-effect transistors

Date

2010
Proceedings Paper
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dc.contributor.authorVerhulst, Anne
dc.contributor.authorVandenberghe, William
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-18T23:48:54Z
dc.date.available2021-10-18T23:48:54Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18276
dc.source.beginpage363
dc.source.conferenceSiGe, Ge, and Related Compounds 4: Materials, Processing and Devices
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
dc.source.endpage372
dc.title

Boosting the on-current of Si-based tunnel field-effect transistors

dc.typeProceedings paper
dspace.entity.typePublication
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