Publication:
Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
Date
| dc.contributor.author | Rafi, Joan Marc | |
| dc.contributor.author | Mercha, Abdelkarim | |
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | Hayama, Kiyoteru | |
| dc.contributor.author | Claeys, Cor | |
| dc.contributor.imecauthor | Mercha, Abdelkarim | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.orcidimec | Mercha, Abdelkarim::0000-0002-2174-6958 | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.date.accessioned | 2021-10-15T15:43:40Z | |
| dc.date.available | 2021-10-15T15:43:40Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9489 | |
| dc.source.beginpage | 7984 | |
| dc.source.endpage | 7992 | |
| dc.source.issue | 12 | |
| dc.source.journal | Japanese J. of Appl. Phys. Part 1 | |
| dc.source.volume | 43 | |
| dc.title | Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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