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Feasibility analysis of direct tunneling through medium-k dielectrics for embedded RAM applications

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dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorMagnus, Wim
dc.contributor.authorWellekens, Dirk
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-16T01:49:33Z
dc.date.available2021-10-16T01:49:33Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10524
dc.source.beginpage444
dc.source.conferenceExtended Abstracts Solid State Devices and Materials Conference
dc.source.conferencedate12/09/2005
dc.source.conferencelocationKobe Japan
dc.source.endpage445
dc.title

Feasibility analysis of direct tunneling through medium-k dielectrics for embedded RAM applications

dc.typeProceedings paper
dspace.entity.typePublication
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