Publication:

Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative <i>V</i><sub>T</sub> Shift Revealed via DC and 1/f Noise Measurements

Date

2026
Journal article
https://doi.org/10.1109/led.2026.3675648
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dc.contributor.authorAsanovski, Ruben
dc.contributor.authorRinaudo, Pietro
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorZhao, Ying
dc.contributor.authorDekkers, Harold
dc.contributor.authorvan Setten, Michiel
dc.contributor.authorMatsubayashi, Daisuke
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.date.accessioned2026-07-24T09:48:44Z
dc.date.available2026-07-24T09:48:44Z
dc.date.createdwos2026
dc.date.issued2026
dc.description.abstractWe investigate the origin of negative threshold voltage shifts in back-gated amorphous IGZO TFTs under positive bias and high temperature stress. Combined DC and 1/f noise measurements reveal that the stress does not generate new dielectric traps but instead broadens the IGZO conduction band tail states. A recovery experiment confirms that the associated threshold voltage, subthreshold swing, and noise degradation are reversible. Simulations using an in-house Poisson solver confirm the experimental observations that high-temperature stress increases hydrogen doping and the density of sub-gap states.
dc.description.wosFundingTextThis work was supported in part by the NanoIC Pilot Line; in part by the Chips Joint Undertaking through European Union's Digital Europe under Grant 101183266; in part by the Horizon Europe Programs under Grant 101183277; and in part by the participating states Belgium (Flanders), France, Germany, Finland, Ireland, and Romania. The work of P. Rinaudo was supported by the Ph.D. Fellowship of the Research Foundation-Flanders, Belgium, under Grant 1SE2723N.
dc.identifier.doi10.1109/led.2026.3675648
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59972
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage929
dc.source.endpage932
dc.source.issue5
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.numberofpages4
dc.source.volume47
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.title

Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements

dc.typeJournal article
dspace.entity.typePublication
imec.internal.crawledAt2026-07-14
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-07-14
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