Publication:

NiO thin films synthesized by atomic layer deposition using Ni(dmamb)2 and O3 as precursors

Date

2012
Journal article
https://doi.org/10.1002/cvde.201106949
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dc.contributor.authorPeter, Antony
dc.contributor.authorToeller, Michael
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorFranquet, Alexis
dc.contributor.authorRichard, Olivier
dc.contributor.authorTielens, Hilde
dc.contributor.authorBrijs, Bert
dc.contributor.authorMoussa, Alain
dc.contributor.authorConard, Thierry
dc.contributor.authorBender, Hugo
dc.contributor.authorSchaekers, Marc
dc.contributor.authorKittl, Jorge
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Elshocht, Sven
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-20T14:27:18Z
dc.date.available2021-10-20T14:27:18Z
dc.date.issued2012
dc.identifier.doi10.1002/cvde.201106949
dc.identifier.issn0948-1907
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21284
dc.source.beginpage61
dc.source.endpage69
dc.source.issue1_3
dc.source.journalChemical Vapor Deposition
dc.source.volume18
dc.title

NiO thin films synthesized by atomic layer deposition using Ni(dmamb)2 and O3 as precursors

dc.typeJournal article
dspace.entity.typePublication
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