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Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient

Date

2016
Proceedings Paper
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dc.contributor.authorMartino, Joao
dc.contributor.authorSivieri, Victor
dc.contributor.authorAgopian, Paula
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-23T12:36:37Z
dc.date.available2021-10-23T12:36:37Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26974
dc.source.beginpageP11
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
dc.source.conferencedate25/01/2016
dc.source.conferencelocationWien Austria
dc.title

Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient

dc.typeProceedings paper
dspace.entity.typePublication
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