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A Full D-band Multi-Gbit RF-DAC in 90 nm SiGe BiCMOS based on Passive Vector Aggregation

 
dc.contributor.advisor
dc.contributor.authorMaiwald, Tim
dc.contributor.authorVisweswaran, Akshay
dc.contributor.authorAufinger, Klaus
dc.contributor.authorWeigel, Robert
dc.contributor.imecauthorVisweswaran, Akshay
dc.date.accessioned2023-02-02T16:20:03Z
dc.date.available2022-12-09T03:10:32Z
dc.date.available2023-02-02T16:20:03Z
dc.date.issued2022
dc.description.wosFundingTextThis work was partly supported by the European Union (ESCS16104) and the German Federal Ministry of Education and Research (16ESE0214) as part of the H2020-ECSEL-2016-1 project TARANTO.
dc.identifier.doi10.1109/ESSCIRC55480.2022.9911462
dc.identifier.eisbn978-1-6654-8494-7
dc.identifier.issnna
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40850
dc.publisherIEEE
dc.source.beginpage449
dc.source.conference48th IEEE European Solid State Circuits Conference (ESSCIRC)
dc.source.conferencedateSEP 19-22, 2022
dc.source.conferencelocationMilan
dc.source.endpage452
dc.source.journalna
dc.source.numberofpages4
dc.subject.keywordsTRANSMITTER
dc.title

A Full D-band Multi-Gbit RF-DAC in 90 nm SiGe BiCMOS based on Passive Vector Aggregation

dc.typeProceedings paper
dspace.entity.typePublication
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