The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology

dc.contributor.author	Sangani, Dishant
dc.contributor.author	Diaz Fortuny, Javier
dc.contributor.author	Bury, Erik
dc.contributor.author	Kaczer, Ben
dc.contributor.author	Gielen, Georges
dc.contributor.imecauthor	Sangani, Dishant
dc.contributor.imecauthor	Diaz Fortuny, Javier
dc.contributor.imecauthor	Bury, Erik
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.imecauthor	Gielen, Georges
dc.contributor.orcidimec	Sangani, Dishant::0000-0002-1016-8654
dc.contributor.orcidimec	Diaz Fortuny, Javier::0000-0002-8186-071X
dc.contributor.orcidimec	Bury, Erik::0000-0002-5847-3949
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.date.accessioned	2024-05-07T08:31:07Z
dc.date.available	2023-07-15T17:05:47Z
dc.date.available	2024-05-07T08:31:07Z
dc.date.issued	2023
dc.identifier.doi	10.1109/IRPS48203.2023.10118026
dc.identifier.eisbn	978-1-6654-5672-2
dc.identifier.issn	1541-7026
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/42159
dc.publisher	IEEE
dc.source.conference	61st IEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate	MAR 26-30, 2023
dc.source.conferencelocation	Monterey
dc.source.journal	N/A
dc.source.numberofpages	6
dc.subject.keywords	RELIABILITY
dc.title	The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology
dc.type	Proceedings paper
dspace.entity.type	Publication
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