Publication:

The use of optical wafer inspection to qualify EUV mask defects and process defects: limitations and advantages of this technique

Date

2010
Proceedings Paper
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dc.contributor.authorVan Den Heuvel, Dieter
dc.contributor.authorJonckheere, Rik
dc.contributor.authorGoethals, Mieke
dc.contributor.authorHendrickx, Eric
dc.contributor.authorCheng, Shaunee
dc.contributor.imecauthorVan Den Heuvel, Dieter
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.accessioned2021-10-18T22:53:13Z
dc.date.available2021-10-18T22:53:13Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18158
dc.source.conferenceInternational Symposium on Extreme Ultraviolet Lithography
dc.source.conferencedate17/10/2010
dc.source.conferencelocationKobe Japan
dc.title

The use of optical wafer inspection to qualify EUV mask defects and process defects: limitations and advantages of this technique

dc.typeProceedings paper
dspace.entity.typePublication
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