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Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations

Date

2013
Proceedings Paper
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dc.contributor.authorAsai, Yuki
dc.contributor.authorHori, Masato
dc.contributor.authorYoneda, Masashi
dc.contributor.authorTsunoda, Isao
dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorYoshino, Kenji
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-21T06:43:16Z
dc.date.available2021-10-21T06:43:16Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21993
dc.source.beginpage185
dc.source.conference8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate4/06/2013
dc.source.conferencelocationFukuoka Japan
dc.source.endpage186
dc.title

Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations

dc.typeProceedings paper
dspace.entity.typePublication
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