Publication:
Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate
Date
| dc.contributor.author | Nguyen, Duy | |
| dc.contributor.author | Loo, Roger | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.date.accessioned | 2021-10-17T09:17:50Z | |
| dc.date.available | 2021-10-17T09:17:50Z | |
| dc.date.issued | 2008 | |
| dc.identifier.issn | 0169-4332 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/14216 | |
| dc.identifier.url | DOI : 10.1016/j.apsusc.2008.02.194 | |
| dc.source.beginpage | 6072 | |
| dc.source.endpage | 6075 | |
| dc.source.issue | 19 | |
| dc.source.journal | Applied Surface Science | |
| dc.source.volume | 254 | |
| dc.title | Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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