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EXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial GeSn films

Date

2013
Proceedings Paper
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dc.contributor.authorGencarelli, Federica
dc.contributor.authorGrandjean, Didier
dc.contributor.authorShimura, Yosuke
dc.contributor.authorVincent, Benjamin
dc.contributor.authorVantomme, Andre
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorHeyns, Marc
dc.contributor.authorTemst, Kristiaan
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-21T07:48:52Z
dc.date.available2021-10-21T07:48:52Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22389
dc.source.beginpage59
dc.source.conference8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate2/06/2013
dc.source.conferencelocationFukuoka Japan
dc.source.endpage60
dc.title

EXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial GeSn films

dc.typeProceedings paper
dspace.entity.typePublication
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