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Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation
Publication:
Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation
Date
2007
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hayama, K.
;
Takakura, K.
;
Ohyama, H.
;
Kuboyama, S.
;
Simoen, Eddy
;
Mercha, Abdelkarim
;
Claeys, Cor
Journal
Physica B: Condensed Matter
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1943
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1943
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations