Publication:
Investigation into the impact of source-drain series resistance on electrical parameters of AlGaN/GaN high electron mobility transistors
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0002-5218-4046 | |
| cris.virtualsource.department | 715a9ada-0798-46d2-a8ca-4775db9a8e46 | |
| cris.virtualsource.orcid | 715a9ada-0798-46d2-a8ca-4775db9a8e46 | |
| dc.contributor.author | Panzo, Eduardo Canga | |
| dc.contributor.author | Graziano, Nilton | |
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | de Andrade, Maria Gloria Cano | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.date.accessioned | 2025-05-30T04:57:00Z | |
| dc.date.available | 2025-05-30T04:57:00Z | |
| dc.date.issued | 2025-OCT | |
| dc.description.wosFundingText | The authors would like to thank the imec partnership program on imec high-speed RF and analog devices and the ARF team for providing the samples. Thanks also to the Brazilian research funding agency FAPESP (Process no: 2023/00123-7) , CAPES and CAADI (Coordination of Affirmative Actions, Diversity and Equity) for supporting the development of this work | |
| dc.identifier.doi | 10.1016/j.sse.2025.109138 | |
| dc.identifier.issn | 0038-1101 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45740 | |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | |
| dc.source.beginpage | 109138 | |
| dc.source.issue | October | |
| dc.source.journal | SOLID-STATE ELECTRONICS | |
| dc.source.numberofpages | 6 | |
| dc.source.volume | 228 | |
| dc.title | Investigation into the impact of source-drain series resistance on electrical parameters of AlGaN/GaN high electron mobility transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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