Publication:

Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate

Date

2010
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDerluyn, Joff
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorMarcon, Denis
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-18T18:58:32Z
dc.date.available2021-10-18T18:58:32Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17606
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5378574
dc.source.beginpage111
dc.source.endpage113
dc.source.issue2
dc.source.journalIEEE Electron Device Letters
dc.source.volume31
dc.title

Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles