Radiation induced transformation of impurity centers in the gate oxide of short channel SOI MOSFETs

dc.contributor.author	Evtukh, A.
dc.contributor.author	Kizjak, A.
dc.contributor.author	Litovchenko, V.G.
dc.contributor.author	Claeys, Cor
dc.contributor.author	Simoen, Eddy
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-16T01:32:32Z
dc.date.available	2021-10-16T01:32:32Z
dc.date.issued	2005
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/10442
dc.source.beginpage	469
dc.source.conference	Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting
dc.source.conferencedate	25/09/2005
dc.source.conferencelocation	Giens France
dc.source.endpage	476
dc.title	Radiation induced transformation of impurity centers in the gate oxide of short channel SOI MOSFETs
dc.type	Proceedings paper
dspace.entity.type	Publication
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