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Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky diodes on 200 mm Si wafers by surface treatments

Date

2014
Proceedings Paper
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dc.contributor.authorLenci, Silvia
dc.contributor.authorHu, Jie
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-22T02:54:02Z
dc.date.available2021-10-22T02:54:02Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24110
dc.source.conference26th International Symposium on Power Semiconductor Devices and ICs - ISPSD
dc.source.conferencedate15/06/2014
dc.source.conferencelocationWaikoloa, HI USA
dc.title

Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky diodes on 200 mm Si wafers by surface treatments

dc.typeProceedings paper
dspace.entity.typePublication
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