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Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
Publication:
Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nishimura, T.
;
Nakatsuka, O.
;
Shimura, Y.
;
Takeuchi, S.
;
Vincent, Benjamin
;
Vantomme, Andre
;
Dekoster, Johan
;
Caymax, Matty
;
Loo, Roger
;
Zaima, S.
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1933
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1933
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations