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Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices

Date

2001
Proceedings Paper
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dc.contributor.authorNicolett, A. S.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T17:26:08Z
dc.date.available2021-10-14T17:26:08Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5514
dc.source.beginpage85
dc.source.conferenceSilicon-on-Insulator Technology and Devices X. Proceedings of the 10th Symposium
dc.source.conferencelocation
dc.source.endpage90
dc.title

Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices

dc.typeProceedings paper
dspace.entity.typePublication
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