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Conference contributions
vfTLP characteristics of ESD diodes in bulk Si gate-all-around vertically stacked horizontal nanowire technology
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vfTLP characteristics of ESD diodes in bulk Si gate-all-around vertically stacked horizontal nanowire technology
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Date
2017
Meeting abstract
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35697.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Shih-Hung
;
Hellings, Geert
;
Scholz, Mirko
;
Linten, Dimitri
;
Mertens, Hans
;
Ritzenthaler, Romain
;
Boschke, Roman
;
Groeseneken, Guido
;
Mocuta, Anda
;
Horiguchi, Naoto
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1886
since deposited on 2021-10-24
Acq. date: 2025-12-15
Citations
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Views
1886
since deposited on 2021-10-24
Acq. date: 2025-12-15
Citations