Publication:
Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique
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1888 since deposited on 2021-10-20
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Acq. date: 2026-01-10
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1888 since deposited on 2021-10-20
1last month
1last week
Acq. date: 2026-01-10
Citations