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Sub-nanometer two-dimensional carrier profiling in silicon MOS technologies using high vacuum scanning spreading resistance microscopy

Date

2009
Meeting abstract
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dc.contributor.authorEyben, Pierre
dc.contributor.authorMody, Jay
dc.contributor.authorNazir, Aftab
dc.contributor.authorSchulze, Andreas
dc.contributor.authorHantschel, Thomas
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorNazir, Aftab
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.date.accessioned2021-10-17T22:09:15Z
dc.date.available2021-10-17T22:09:15Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15288
dc.source.beginpage2004
dc.source.conference216th ECS Meeting
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.title

Sub-nanometer two-dimensional carrier profiling in silicon MOS technologies using high vacuum scanning spreading resistance microscopy

dc.typeMeeting abstract
dspace.entity.typePublication
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