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Articles
Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers
Publication:
Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers
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Date
2020
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44379.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Claeys, Cor
;
Hsu, Brent
;
Mols, Yves
;
Kunert, Bernardette
;
Bender, Hugo
;
Seidel, Felix
;
Carolan, Patrick
;
Langer, Robert
;
Merckling, Clement
;
Alian, AliReza
;
Waldron, Niamh
;
Eneman, Geert
;
Collaert, Nadine
;
Heyns, Marc
;
Simoen, Eddy
Journal
ECS Journal of Solid State Science and Technology
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1
since deposited on 2021-10-28
Acq. date: 2025-12-15
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1938
since deposited on 2021-10-28
Acq. date: 2025-12-15
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Downloads
1
since deposited on 2021-10-28
Acq. date: 2025-12-15
Views
1938
since deposited on 2021-10-28
Acq. date: 2025-12-15
Citations