Publication:

Superior NBTI in high-k SiGe transistors - Part II: theory

Date

2017
Journal article
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dc.contributor.authorWaltl, Michael
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorGrill, A.
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGrasser, Tibor
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-24T18:26:51Z
dc.date.available2021-10-24T18:26:51Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29892
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7891510/
dc.source.beginpage2099
dc.source.endpage2105
dc.source.issue5
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume64
dc.title

Superior NBTI in high-k SiGe transistors - Part II: theory

dc.typeJournal article
dspace.entity.typePublication
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