Publication:

Strained germanium quantum well p-FinFETs fabricated on 45nm fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

Date

2015
Proceedings Paper
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dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorLoo, Roger
dc.contributor.authorDemuynck, Steven
dc.contributor.authorChew, Soon Aik
dc.contributor.authorSchram, Tom
dc.contributor.authorTao, Zheng
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSun, Jianwu
dc.contributor.authorMilenin, Alexey
dc.contributor.authorMertens, Hans
dc.contributor.authorVrancken, Christa
dc.contributor.authorFavia, Paola
dc.contributor.authorSchaekers, Marc
dc.contributor.authorBender, Hugo
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLanger, Robert
dc.contributor.authorBarla, Kathy
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T01:03:06Z
dc.date.available2021-10-23T01:03:06Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26181
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7223701
dc.source.beginpageT56
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate16/06/2015
dc.source.conferencelocationKyoto Japan
dc.source.endpageT57
dc.title

Strained germanium quantum well p-FinFETs fabricated on 45nm fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

dc.typeProceedings paper
dspace.entity.typePublication
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