Publication:

Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

Date

2005
Proceedings Paper
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dc.contributor.authorYu, HongYu
dc.contributor.authorChen, J.D.
dc.contributor.authorLi, M.F.
dc.contributor.authorLee, S.J.
dc.contributor.authorKwong, D.L.
dc.contributor.authorvan Dal, Marc
dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorKubicek, Stefan
dc.contributor.authorZhao, Chao
dc.contributor.authorBender, Hugo
dc.contributor.authorBrijs, Bert
dc.contributor.authorGeenen, Luc
dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorAbsil, Philippe
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-16T07:24:22Z
dc.date.available2021-10-16T07:24:22Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11597
dc.source.beginpage27/03/2001
dc.source.conferenceTechnical Digest International Electron Device Meeting (IEDM)
dc.source.conferencedate5/12/2005
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage27/03/2004
dc.title

Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

dc.typeProceedings paper
dspace.entity.typePublication
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