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SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
Publication:
SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
Date
2008
Proceedings Paper
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16344.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bauer, Matthias
;
Machkaoutsan, Vladimir
;
Zhang, Y.
;
Weeks, Doran
;
Spear, Jennifer
;
Thomas, Shawn
;
Verheyen, Peter
;
Kerner, Christoph
;
Clemente, Francesca
;
Bender, Hugo
;
Shamiryan, Denis
;
Loo, Roger
;
Hikavyy, Andriy
;
Hoffmann, Thomas Y.
;
Absil, Philippe
;
Biesemans, Serge
Journal
Abstract
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1940
since deposited on 2021-10-17
420
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1940
since deposited on 2021-10-17
420
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations